CATEGORY 6 — SENSORS AND LASERS
6 A - Equipment, assemblies and components
6A001 - Acoustic systems, equipment and components, as follows:
a. | Marine acoustic systems, equipment and specially designed components therefor, as follows:
1. | systems, active equipment (transmitters or transmitters and receivers) and their specially designed components, as follows:
Note: |
Paragraph 6A001.a.1. does not control control equipment as follows:
a. | echo sounders operating vertically below the device, not having a scanning function of more than ± 20° and limited to measuring the depth of water, the distance of submerged or buried objects or the detection of schools of fish; |
b. | acoustic beacons, as follows:
1. | acoustic distress beacons; |
2. | underwater pulse transmitters (pingers) specially designed to find or return to an underwater position. |
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a. | seabed acoustic observation equipment, as follows:
1. | surface observation equipment designed for the preparation of topographic maps of the seabed and having all of the following characteristics:
a. | designed to take measurements at an angle greater than 20° from the vertical angle; |
b. | designed to measure seabed topography at depths of more than 600 meters below the water surface; |
c. | 'probing resolution' less than 2; And |
d. | 'enhancement' of depth accuracy by compensation for all of the following characteristics:
1. | movement of the acoustic sensor; |
2. | back and forth propagation in the water between sensor and seabed; And |
3. | speed of sound at the sensor; |
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Technical notes:
1. |
'survey resolution' is the corridor width (in degrees) divided by the maximum number of surveys per corridor; |
2. |
'reinforcement' includes the ability to compensate by external means. |
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2. | Underwater observation equipment designed for the preparation of topographic maps of the seabed and having one of the following characteristics: Technical note: The nominal pressure of the acoustic sensor determines the nominal depth of equipment specified in 6A001.a.1.a.2.
a. | having all of the following characteristics:
1. | designed or modified to operate at depths greater than 300 m; And |
2. | whose 'sounding rate' exceeds 3,800 m/s or ; Technical note: The 'probing rate' is the product of the maximum speed (in m/s) at which the sensor can operate and the maximum number of polls per lane assuming 100% coverage. For systems that produce soundings in two directions (3D sonars), the maximum 'sounding rate' in each direction should be used. |
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b. | observation equipment, not specified in 6A001.a.1.a.2.a., having all of the following characteristics:
1. | designed or modified to operate at depths exceeding 100 m; |
2. | designed to take measurements at an angle greater than 20° from the vertical angle; |
3. | having one of the following characteristics:
a. | operating frequency less than 350 kHz; Or |
b. | designed to measure seabed topography at a distance of more than 200 m from the acoustic sensor; And |
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4. | 'improved' depth accuracy by compensating all of the following parameters:
a. | movement of the acoustic sensor; |
b. | back and forth propagation in the water between sensor and seabed; And |
c. | speed of sound at the sensor; |
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3. | side scan sonars (SBL) or synthetic aperture sonars (SOS), designed for seabed imaging and having all of the following characteristics, and their specially designed transmission and reception acoustic arrays:
a. | designed or modified to operate at depths greater than 500 m; |
b. | whose 'coverage area rate' exceeds 570 m 2 /s while operating at the maximum possible rate at a 'longitudinal resolution' of less than 15 cm; And |
c. | a 'transverse resolution' of less than 15 cm. |
Technical notes:
1. |
the 'coverage area rate' (in m 2 /s) is twice the product of the sonar range (in m) and the maximum speed (in m/s) at which the sensor can operate at that rate ; |
2. |
'Longitudinal resolution' corresponds, for SBL only, to the product of the azimuth (horizontal) beamwidth (in degrees), the sonar range and 0.873; |
3. |
the 'transverse resolution' (in cm) corresponds to 75 divided by the spectrum width of the signal (in kHz). |
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b. | transmission and reception systems or matrices, designed for the detection or localization of objects, and having any of the following characteristics:
1. | transmission frequency less than 10 kHz; |
2. | sound pressure greater than 224 dB (reference 1 μΡa at 1 m) for equipment operating in the band between 10 and 24 kHz inclusive; |
3. | sound pressure greater than 235 dB (reference 1 μΡa at 1 m) for equipment operating in the band between 24 and 30 kHz; |
4. | forming beams of less than 1° on any axis and operating on frequencies below 100 kHz; |
5. | designed to measure object distances with a range greater than 5,120 m; Or |
6. | designed to withstand, in normal operation, the pressure of depths greater than 1,000 m, and comprising transducers:
a. | with dynamic pressure compensation; Or |
b. | using a material other than lead zirconate titanate in their transduction elements; |
c. | acoustic projectors, including transducers comprising piezoelectric, magnetostrictive, electrostrictive, electrodynamic or hydraulic elements operating separately or in a specified combination, and having any of the following characteristics:
Note 1: |
The status of acoustic projectors, including transducers, specially designed for other equipment not specified in 6A001 is determined by the status of that equipment. |
Note 2: |
Paragraph 6A001.a.1.c. does not cover electronic sources with exclusively vertical sound direction, nor mechanical noise sources (for example, pneumatic cannons or steam cannons) nor chemical noise sources (for example, explosives). |
Note 3: |
Piezoelectric elements specified in 6A001.a.1.c. include those from single crystals of lead-magnesium-niobate/lead-titanate (Pb(Mg 1/3 Nb 2/3 )O 3 -PbTiO 3 , or PMN-PT) created from solid solution or crystals unique lead-indium-niobate/lead-magnesium niobate/lead-titanate (Pb(In 1/2 Nb 1/2 )O 3 –Pb(Mg 1/3 Nb 2/3 )O 3 –PbTiO 3 , or PIN-PMN-PT) created from a solid solution. |
1. | operating on frequencies below 10 kHz and having any of the following characteristics:
a. | not designed to operate continuously at 100% of their duty cycle and having a radiated 'free field source level' (SL RMS ) greater than (10log(f) + 169.77) dB (reference 1 μPa at 1 m), f being the frequency in hertz of the maximum response to voltage emission below 10 kHz; Or |
b. | designed to operate continuously at 100% of their duty cycle and having a continuous radiated 'free field source level' (SL RMS ) at 100% of the duty cycle greater than (10log(f) + 159, 77) dB (reference 1 μPa at 1 m), f being the frequency in hertz of the maximum response to voltage emission below 10 kHz; Or Technical note: The 'free field source level (SL RMS )' is defined along the maximum response axes and in the far field of the acoustic projector. It can be calculated from the voltage emission response using the following equation: SL RMS = (TVR + 20log V RMS ) dB (ref 1 μPa at 1 m), where SL RMS is the source level, TVR the voltage response to the emission and V RMS the projector control voltage. |
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3. | with sidelobe suppression greater than 22 dB; |
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d. | acoustic systems and equipment for determining the position of surface or underwater vehicles having all of the following characteristics as well as components specially designed for this purpose:
1. | detection range over 1000m; And |
2. | determined positioning error of less than 10 m RMS (root mean square value) measured at a range of 1000 m; |
Note: |
Paragraph 6A001.a.1.d. understand:
a. | equipment that uses coherent “signal processing” between two or more beacons and the hydrophone unit carried by the surface or underwater craft; |
b. | equipment that is capable of performing automatic correction of sound speed propagation errors for the calculation of a point. |
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e. | individual active sonars, specially designed or modified to automatically detect, locate and classify swimmers and divers, having all of the following characteristics, and their specially designed acoustic transmission and reception matrices:
1. | detection range over 530m; |
2. | determined positioning error of less than 15 m RMS (root mean square value) measured at a range of 530 m; And |
3. | bandwidth for signal transmission greater than 3 kHz; |
NB: |
For diver detection systems specially designed or modified for military use, see War Materiel List. |
Note: |
For 6A001.a.1.e, which addresses multiple detection ranges for various environments, the widest detection range is used. |
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2. | systems, passive equipment, and specially designed components therefor, as follows:
a. | hydrophones having any of the following characteristics:
Note: |
The control status of hydrophones specially designed for other equipment is determined by the control status of the latter. |
Technical note: Hydrophones are composed of one or more sensing elements producing a single channel of acoustic output. Those that contain multiple elements may be called hydrophone groups.
1. | comprising continuous flexible sensitive elements; |
2. | comprising flexible assemblies of discrete sensitive elements having a diameter or length of less than 20 mm and a spacing between elements of less than 20 mm; |
3. | comprising one of the following sensitive elements:
b. | 'piezoelectric polymer films' other than polyvinylidene fluoride (PVDF) and its copolymers P(VDF-TrFE) and P(VDF-TFE); |
c. | 'soft piezoelectric composites'; |
d. | lead-magnesium-niobate/lead-titanate piezoelectric single crystals, i.e. Pb(Mg 1/3 Nb 2/3 )O 3 -PbTiO 3 , or PMN-PT, created from a solid solution; Or |
e. | lead-indium-niobate/lead-magnesium niobate/lead-titanate piezoelectric single crystals, i.e., Pb(In 1/2 Nb 1/2 )O 3 –Pb(Mg 1/3 Nb 2/ 3 )O 3 –PbTiO 3 , or PIN-PMN-PT, created from a solid solution; |
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4. | 'hydrophone sensitivity' better than -180 dB at any depth without acceleration compensation; |
5. | designed to operate at depths exceeding 35 m with acceleration compensation; Or |
6. | designed to operate at depths of more than 1,000 m; |
Technical notes:
1. |
The sensitive elements of a 'piezoelectric polymer film' consist of a polarized polymer film which is stretched over a support or a coil (mandrel) and attached thereto. |
2. |
The sensitive elements of 'soft piezoelectric composites' consist of particles or fibers of piezoelectric ceramics associated with an electrically insulating and acoustically transparent rubber, polymer or epoxy compound, in which the compound is an integral part of the sensitive elements. |
3. |
The 'hydrophone sensitivity' is 20 times the logarithm to base 10 of the ratio of the effective output voltage to a reference of 1 V, when the hydrophone sensor without a preamplifier is placed in an acoustic wave field planes having an effective pressure of 1 μPa. For example, a hydrophone with a sensitivity of –160 dB (1 V per μPa reference) will give an output voltage of 10 – 8 V in this field, while a hydrophone with a sensitivity of -180 dB will only produce an output voltage of 10 – 9 V. Thus, a sensitivity of – 160 dB is better than a sensitivity of – 180 dB. |
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b. | towed acoustic hydrophone batteries having any of the following characteristics: Technical note: Hydrophone batteries consist of multiple hydrophones providing multiple acoustic output channels.
1. | spacing between hydrophone groups of less than 12.5 m or 'may be modified' to have spacing between hydrophone groups of less than 12.5 m; |
2. | designed or 'capable of being modified' to operate at depths of more than 35 m; Technical note: The words 'may be modified' in 6A001.a.2.b.1. and 6A001.a.2.b.2. mean that there are ways to modify wiring or interconnections to change the spacing of a hydrophone group or operating depth limits. spare wiring representing more than 10% of the number of cables, hydrophone group spacing adjustment blocks or internal depth limiting devices that are adjustable or that control more than one hydrophone group. |
3. | heading sensors specified in 6A001.a.2.d.; |
4. | longitudinally reinforced battery jackets; |
5. | diameter of the assembled battery less than 40 mm; |
7. | hydrophone characteristics specified in 6A001.a.2.a.; Or |
8. | hydrophone sensors with accelerometer specified in 6A001.a.2.g.; |
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c. | signal processing equipment specially designed for towed acoustic hydrophone arrays, having "user accessible programmability" and processing and correlation in the time or frequency domain, including spectral analysis, digital filtering and beamforming using fast Fourier transform or other transforms or processes; |
d. | heading sensors having all of the following characteristics:
1. | a “precision” better than 0.5; And |
2. | designed to operate at depths greater than 35 m or having a depth sensing device capable of being adjusted or exchanged to operate at depths greater than 35 m; |
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e. | bottom-mounted or suspended underwater hydrophone batteries having any of the following characteristics:
1. | incorporating hydrophones specified in 6A001.a.2.a.; |
2. | comprising multiplexed hydrophone group signals having all of the following characteristics:
a. | designed to operate at depths greater than 35 m or having a depth sensing device capable of being adjusted or exchanged to operate at depths greater than 35 m; And |
b. | capable of being replaced during operation by batteries of towed acoustic hydrophones; Or |
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3. | incorporating hydrophone sensors with accelerometer specified in 6A001.a.2.g.; |
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f. | processing equipment specially designed for bottom-laid or suspended submarine cable systems having "user accessible programmability" and time or frequency domain processing and correlation, including spectral analysis, digital filtering and beamforming using fast Fourier transform or other transforms or processes; |
g. | hydrophone sensors with accelerometer having all of the following characteristics:
1. | comprising three accelerometers arranged along three distinct axes; |
2. | having a general 'acceleration sensitivity' greater than 48 dB (reference of 1000 mV RMS per 1 g); |
3. | designed to operate at depths greater than 35 meters; And |
4. | having an operating frequency less than 20 kHz. |
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Note: |
Paragraph 6A001.a.2.g. does not apply to particle velocity sensors or geophones. |
Technical notes:
1. | Hydrophone sensors with accelerometer are also known as hydroacoustic sensors. |
2. | The 'acceleration sensitivity' is 20 times the logarithm to base 10 of the ratio of the effective output voltage to a 1 V reference, when the hydrophone sensor without a preamplifier is placed in a plane wave acoustic field having an effective pressure of 1 g (9.81 m/s 2 ). |
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Note: |
Paragraph 6A001.a.2 also covers receiving equipment, whether or not connected, in normal operation, to separate active equipment, and its specially designed components. |
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b. | sonar acquisition equipment processing speed by correlation or Doppler effect, designed for determining the horizontal speed of the equipment carrier relative to the bottom, as follows:
1. | sonar acquisition equipment processing speed by correlation having one of the following characteristics:
a. | designed to operate at distances greater than 500 m between the equipment carrier and the seabed; Or |
b. | having a speed “accuracy” better than 1%; |
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2. | sonar acquisition equipment processing speed by Doppler effect having a speed “accuracy” better than 1%; |
Note 1: |
Paragraph 6A001.b. does not apply to limited echo sounders:
b. | measuring the distance of submerged or buried objects; Or |
c. | to detect schools of fish. |
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Note 2: |
Paragraph 6A001.b. does not control control equipment specially designed for installation on surface ships. |
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6A002 - Optical sensors or their equipment and components, as follows:
a. | optical detectors, as follows:
1. | “space qualified” semiconductor detectors, as follows:
Note: |
For purposes of 6A002.a.1, semiconductor detectors include “focal plane arrays”. |
a. | “space qualified” semiconductor detectors having all of the following characteristics:
1. | peak response in the wavelength range greater than 10 nm but not greater than 300 nm; And |
2. | response of less than 0.1% of the peak response for wavelengths greater than 400 nm; |
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b. | “space qualified” semiconductor detectors having all of the following characteristics:
1. | peak response in the wavelength range greater than 900 nm but not greater than 1200 nm; And |
2. | response “time constant” of 95 ns or less; |
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c. | “space qualified” semiconductor detectors having a peak response in the wavelength range greater than 1,200 nm but not greater than 30,000 nm; |
d. | “Space-qualified” “focal plane arrays” having more than 2,048 elements per array and having a peak response in the wavelength range exceeding 300 nm but not exceeding 900 nm; |
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2. | image intensifier tubes and their specially designed components, as follows:
Note: |
Paragraph 6A002.a.2. does not control imageless photoelectron multiplier tubes having an electron detection device in the vacuum of space, limited only to any of the following:
a. | a single metal anode; Or |
b. | metal anodes with center-to-center spacing greater than 500 μm. |
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Technical note: 'Charge multiplication' is a form of electronic image amplification and is defined as the generation of charge carriers following a process of electron gain by impact ionization. 'Charge multiplication' sensors can take the form of an image intensifier tube, a solid-state detector or a 'focal plane array'.
a. | image intensifier tubes having all of the following:
1. | peak response in the wavelength range greater than 400 nm but not greater than 1050 nm; |
2. | electronic image amplification employing any of the following:
a. | a microchannel plate having a hole spacing (center-to-center spacing) of 12 μm or less; Or |
b. | an electron detection device with a non-square pixel pitch of 500 μm or less, specially designed or modified to achieve 'charge multiplication' other than by a microchannel plate; And |
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3. | one of the following photocathodes:
a. | multialkaline photocathodes (for example S-20 and S-25) having a light sensitivity exceeding 350 μΑ/lm; |
b. | gallium arsenide (GaAs) or gallium-indium arsenide (GaInAs) photocathodes; Or |
c. | other “III-V compound” semiconductor photocathodes having a maximum “radiant energy sensitivity” greater than 10 mA/W; |
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b. | image intensifier tubes having all of the following:
1. | peak response in the wavelength range exceeding 1050 nm but not exceeding 1800 nm; |
2. | electronic image amplification employing any of the following:
a. | a microchannel plate having a hole spacing (center-to-center spacing) of 12 μm or less; Or |
b. | an electron detection device with a non-square pixel pitch of 500 μm or less, specially designed or modified to achieve 'charge multiplication' other than by a microchannel plate; And |
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3. | “III-V compound” semiconductor photocathodes (e.g., GaAs or GaInAs) and transferred electron photocathodes having a maximum “radiant energy sensitivity” greater than 15 mA/W; |
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c. | specially designed components, as follows:
1. | microchannel plates having a hole spacing (center-to-center spacing) of 12 μm or less; |
2. | an electron detection device with a non-square pixel pitch of 500 μm or less, specially designed or modified to achieve 'charge multiplication' other than by a microchannel plate; |
3. | “III-V compound” semiconductor photocathodes (e.g., GaAs or GaInAs) and transferred electron photocathodes;
Note: |
Paragraph 6A002.a.2.c.3. does not control compound semiconductor photocathodes designed to achieve maximum “radiant energy sensitivity”:
a. | 10 mA/W or less at the peak response in the wavelength range exceeding 400 nm, but not exceeding 1050 nm; Or |
b. | of 15 mA/W or less at the peak response in the wavelength range exceeding 1050 nm, but not exceeding 1800 nm. |
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3. | “focal plane arrays” not “space qualified”, as follows:
NB: |
Non-“space-qualified” “microbolometer” “focal plane arrays” are only specified in 6A002.a.3.f. |
Technical note: Groups of linear or mosaic multiple element detectors are called “focal plane arrays”.
Note 1: |
Paragraph 6A002.a.3. includes photoconductive networks and photovoltaic networks. |
Note 2: |
Paragraph 6A002.a.3. do not aim:
a. | multi-element encapsulated photoconductor cells (not more than 16 elements) using either lead sulfide or lead selenide; |
b. | pyroelectric detectors, using one of the following materials:
1. | triglycine sulfate and variants; |
2. | zirconium-lanthanum-lead titanate and variants; |
4. | polyvinylidene fluoride and variants; Or |
5. | strontium-barium niobate and variants; |
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c. | 'focal plane arrays' specially designed or modified to achieve 'charge multiplication' and limited by design to a maximum 'radiant energy sensitivity' of 10 mA/W or less for wavelengths over 760 nm, having all of the following characteristics:
1. | having a response limit mechanism designed not to be deleted or modified; And |
2. | one of the following characteristics:
a. | the response limit mechanism is integrated with or combined with the detector element; Or |
b. | The “focal plane array” only works if the response limit mechanism is in place. |
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Technical note: A response limiting mechanism built into the detector element is designed not to be removed or modified without rendering the detector inoperable. |
d. | thermopile networks comprising fewer than 5,130 elements. |
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Technical note: 'Charge multiplication' is a form of electronic image amplification and is defined as the generation of charge carriers following a process of electron gain by impact ionization. 'Charge multiplication' sensors can take the form of an image intensifier tube, a solid-state detector or a 'focal plane array'.
a. | “Non-space-qualified” “focal plane arrays” having all of the following characteristics:
1. | individual elements whose peak response is in the wavelength range greater than 900 nm but not greater than 1050 nm; And |
2. | one of the following characteristics:
a. | a response “time constant” of less than 0.5 ns; Or |
b. | specially designed or modified to achieve 'charge multiplication' and having a maximum 'radiant energy sensitivity' of more than 10 mA/W; |
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b. | “Non-space-qualified” “focal plane arrays” having all of the following characteristics:
1. | individual elements whose peak response is in the wavelength range greater than 1050 nm but not greater than 1200 nm; And |
2. | one of the following characteristics:
a. | response “time constant” of 95 ns or less; Or |
b. | specially designed or modified to achieve 'charge multiplication' and having a maximum 'radiant energy sensitivity' of more than 10 mA/W; |
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c. | non-linear (two-dimensional) non-“space-qualified” “focal plane arrays” comprising individual elements whose peak response is in the wavelength range greater than 1 200 nm but not greater than 30 000nm;
NB: |
Non-“space-qualified” “microbolometer” “focal plane arrays” based on silicon or other material are only controlled by 6A002.a.3.f. |
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d. | Non-“space-qualified” linear (one-dimensional) “focal plane arrays” having all of the following characteristics:
1. | individual elements whose peak response is in the wavelength range greater than 1200 nm but not greater than 3000 nm; And |
2. | one of the following characteristics:
a. | a ratio between the 'scanning direction' dimension of the detector element and the 'transverse scanning direction' dimension of the detector element less than 3.8; Or |
b. | signal processing in the sensor elements; |
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Note: |
Paragraph 6A002.a.3.d. does not control “focal plane arrays” (not exceeding 32 elements) comprising detector elements limited only to germanium. |
Technical note: For the purposes of 6A002.a.3.d., 'scan direction across' is defined as the axis parallel to the linear array of the detector elements and 'scan direction' is defined as the axis perpendicular to the linear array of detector elements. |
e. | Non-“space-qualified” linear (one-dimensional) “focal plane arrays” having individual elements whose peak response is in the wavelength range greater than 3 000 nm but not greater than 30 000 nm; |
f. | non-linear (two-dimensional) infrared “focal plane arrays” not “space qualified” based on a “microbolometer” material comprising individual elements whose unfiltered response is in the length range d wave equal to or greater than 8,000 nm but not greater than 14,000 nm; Technical note: For the purposes of 6A002.a.3.f., 'microbolometer' means a thermal imaging sensor which, due to a change in temperature in the sensor due to the absorption of infrared rays, is used to generate any usable signal. |
g. | “Non-space-qualified” “focal plane arrays” having all of the following characteristics:
1. | individual elements whose peak response is in the wavelength range greater than 400 nm but not greater than 900 nm; |
2. | specially designed or modified to achieve 'charge multiplication' and having a maximum 'radiant energy sensitivity' of more than 10 mA/W for wavelengths exceeding 760 nm; And |
3. | containing more than 32 elements; |
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b. | 'monospectral imaging sensors' and 'multispectral imaging sensors', designed for remote sensing purposes, and having any of the following characteristics:
1. | instantaneous field of view less than 200 μrad (microradians); Or |
2. | intended to operate in the wavelength range greater than 400 nm but not greater than 30 000 nm and having all of the following characteristics:
a. | providing imaging data output in digital format; And |
b. | having one of the following characteristics:
1. | “qualified for space use”; Or |
2. | designed for onboard aeronautical use and using detectors other than silicon and having an instantaneous field of view of less than 2.5 mrad (milliradians); |
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Note: |
Paragraph 6A002.b.1. does not control "monospectral imaging sensors" whose peak response is in the wavelength range greater than 300 nm but not greater than 900 nm and which include only one of the detectors not "qualified for space use” or “focal plane arrays” not “qualified for space use” following:
1. | charge-coupled devices (CCDs) not designed or modified to achieve 'charge multiplication'; Or |
2. | Complementary metal oxide semiconductor (CMOS) devices not designed or modified to achieve 'charge multiplication'. |
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c. | 'direct vision' imaging equipment comprising any of the following:
1. | image intensifier tubes specified in 6A002.a.2.a. or paragraph 6A002.a.2.b.; |
2. | “focal plane arrays” specified in 6A002.a.3; Or |
3. | solid-state detectors specified in 6A002.a.1.; |
Technical note: The term 'live view' refers to imaging equipment which presents a visible image to a human observer without converting it into an electronic signal for display on a television screen and which cannot record or store the image by photographic means , electronic or other.
Note: |
Paragraph 6A002.c. does not control the following equipment, when it contains photocathodes other than gallium arsenide (AsGa) or gallium-indium arsenide (AsInGa):
a. | systems used to detect unwanted presences and to sound the alarm in industrial or civil premises, systems for controlling or counting traffic or movements in industry; |
c. | industrial equipment used for examining, sorting or analyzing the properties of materials; |
d. | flame detectors for industrial ovens; |
e. | equipment specially designed for laboratory use. |
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d. | special components for optical sensors, as follows:
1. | “space-qualified” cryogenic cooling systems; |
2. | non-“space-qualified” cryogenic cooling systems having a cooling source temperature below 218 K (–55 °C), as follows:
a. | closed cycle and having a specified value of (observed) mean time to failure (MTTF) or mean time between failure (MTBF) exceeding 2,500 hours; |
b. | self-regulating Joule-Thomson mini-coolers with outer bore diameters less than 8 mm; |
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3. | optical sensing fibers specially manufactured in their composition or structure, or modified by coating, so as to be sensitive to acoustic, thermal, inertial, electromagnetic or nuclear radiation effects; |
Note: |
Paragraph 6A002.d.3. does not control optical detection fibers specially designed for detection purposes during drilling. |
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6A003 - Cameras, systems or equipment and their components, as follows:
a. | Instrument cameras and specially designed components therefor, as follows:
Note: |
Instrumentation cameras specified in 6A003.a.3. to 6A003.a.5. and equipped with modular structures must be rated at their maximum capacity using existing expansion modules according to the specifications provided by the device manufacturer. |
1. | high-speed cameras using any film format, from 8mm to 16mm inclusive, in which the film advances continuously throughout the recording period, and which are capable of recording at frame rates of over 13,150 frames per second;
Note: |
Paragraph 6A003.a.1. does not cover cameras intended for civilian purposes. |
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2. | high-speed mechanical cameras in which the film does not move and which are capable of recording at speeds of more than 1 million frames per second for the full framing height of 35 mm film or at proportionally higher speeds for lower framing heights or at proportionally lower speeds for higher framing heights; |
3. | scanning cameras, mechanical or electronic, as follows:
a. | mechanical scanning cameras having a recording speed of more than 10 mm/ms; |
b. | electronic scanning cameras having a temporal resolution better than 50 ns; |
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4. | full-frame electronic cameras having a speed of more than 1 million frames per second; |
5. | electronic cameras having the following two characteristics:
a. | electronic shutter speed (beam blanking capability) less than 1 μs per full frame; And |
b. | playback time allowing a frame rate of over 125 full frames per second; |
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6. | expansion modules having all of the following characteristics:
a. | specially designed for modular structure instrumentation cameras that are specified in 6A003.a.; And |
b. | allowing these devices to meet the characteristics referred to in paragraphs 6A003.a.3., 6A003.a.4. or 6A003.a.5., according to specifications provided by the manufacturer; |
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b. | imaging cameras, as follows:
Note: |
Paragraph 6A003.b. does not control television cameras and video cameras specially designed for use in television broadcasting. |
1. | video cameras containing solid-state sensors, the peak response of which is in the wavelength range greater than 10 nm but not greater than 30 000 nm having all of the following characteristics:
a. | having one of the following characteristics:
1. | more than 4 × 10 6 “active pixels” per sensitive matrix for monochrome (black and white) cameras; |
2. | more than 4 × 10 6 “active pixels” per sensitive matrix for color cameras with three sensitive surface elements; Or |
3. | more than 12 × 10 6 “active pixels” for color cameras with a sensitive surface element; And |
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b. | having one of the following characteristics:
1. | optical mirrors specified in 6A004.a.; |
2. | optical mirror equipment specified in 6A004.d.; Or |
3. | ability to annotate internally generated 'camera tracking data'; |
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Technical note:
1. |
For purposes of this paragraph, digital video cameras shall be rated based on the maximum number of "active pixels" used for capturing moving images. |
2. |
For the purposes of this subsection, 'camera tracking data' means the information necessary to define the orientation of the camera's line of sight relative to the Earth. This includes: 1) the horizontal angle of the camera's line of sight relative to the direction of the Earth's magnetic field; 2) the vertical angle between the camera's line of sight and the Earth's horizon. |
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2. | scanning cameras and scanning camera systems, having all of the following characteristics:
a. | having a peak response in the wavelength range greater than 10 nm, but not greater than 30,000 nm; |
b. | linear detector arrays of more than 8,192 elements per array; And |
c. | mechanical scanning in one direction; |
Note: |
6A003.b.2 does not control scanning cameras and scanning camera systems specially designed for any of the following uses:
a. | industrial or civil photocopiers; |
b. | scanners specially designed for civil, stationary, short-distance applications (e.g. reproduction of images or characters appearing in documents, works of art or photographs); Or |
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3. | cameras using image intensifiers specified in 6A002.a.2.a. or paragraph 6A002.a.2.b.; |
4. | imaging cameras comprising “focal plane arrays” having any of the following characteristics:
a. | comprising “focal plane arrays” specified in 6A002.a.3.a. to 6.A002.a.3.e.; |
b. | comprising “focal plane arrays” specified in 6A002.a.3.f.; Or |
c. | comprising “focal plane arrays” specified in 6A002.a.3.g.; |
Note 1: |
Imaging cameras specified in 6A003.b.4. include "focal plane arrays" combined with sufficient "signal processing" electronics, in addition to the readout integrated circuit, to allow at a minimum the output of an analog or digital signal once the device is powered on. |
Note 2: |
Paragraph 6A003.b.4.a. does not apply to monitoring cameras comprising linear “focal plane arrays” of 12 elements or less, not using time delay and integration within the element, designed for one of the following uses:
a. | systems used to detect unwanted presences and to sound the alarm in industrial or civil premises, systems for controlling or counting traffic or movements in industry; |
b. | industrial equipment used for inspection or control of heat flows in construction, equipment and industrial processes; |
c. | industrial equipment used for examining, sorting or analyzing the properties of materials; |
d. | equipment specially designed for laboratory use; Or |
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Note 3: |
Paragraph 6A003.b.4.b. does not control imaging cameras having any of the following characteristics:
a. | a maximum cadence equal to or less than 9 Hz; |
b. | having all of the following characteristics:
1. | having a minimum horizontal or vertical 'instantaneous field of view' (IFOV) of at least 10 mrad/pixel (milliradians/pixel); |
2. | incorporating a fixed focal length lens not designed to be removed; |
3. | not incorporating a “direct vision” display; And |
4. | having one of the following characteristics:
a. | no possibility of obtaining a viewable image of the detected field of view; Or |
b. | designed for a single type of application and not to be modifiable by the user; Or |
c. | specially designed for installation in a civil land vehicle intended for the transport of passengers, as follows:
1. | the installation and configuration of the camera in the vehicle serves only to assist the driver in using the vehicle safely; |
2. | the camera can only work when installed in one of the following equipment:
a. | the civil land vehicle of less than 4,500 kg (gross vehicle weight) intended for the transport of passengers for which it was intended; Or |
b. | an authorized and specially designed maintenance test facility; And |
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3. | an active mechanism prevents the camera from operating when removed from the vehicle for which it was intended. |
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Technical notes:
1. |
The 'instantaneous field of view (IFOV)' referred to in note 3.b. of 6A003.b.4. is the lower number of the 'horizontal IFOV' or the 'vertical IFOV'. 'Horizontal IFOV': horizontal field of view (FOV)/number of horizontal detector elements. 'Vertical FOV': vertical field of view (FOV)/number of vertical detector elements. |
2. |
The 'direct vision' referred to in note 3.b. of 6A003.b.4. refers to an imaging camera operating in the infrared spectrum that presents a visible image to a human observer using a microdisplay near the eye incorporating some light shielding mechanism. |
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Note 4: |
Paragraph 6A003.b.4.c. does not control imaging cameras having any of the following characteristics:
a. | having all of the following characteristics:
1. | where the camera is specifically designed for installation as an integrated component in indoor and wall-mounted systems or equipment, limited by design to a single type of application, as follows:
a. | monitoring of industrial processes, quality control, or analysis of material properties; |
b. | laboratory equipment specially intended for scientific research; |
d. | financial fraud detection equipment; And |
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2. | can only work when installed in one of the following equipment:
a. | the system(s) or equipment for which it was intended; Or |
b. | an authorized and specially designed maintenance test facility; And |
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3. | an active mechanism prevents the camera from operating when removed from the system(s) or equipment for which it was intended; |
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b. | when the camera is specially designed for installation in a civil land vehicle intended for the transport of passengers or on passenger and vehicle ferries, as follows:
1. | the installation and configuration of the camera in the vehicle or ferry is solely to assist the driver or operator in using the vehicle or ferry safely; |
2. | the camera can only work when installed in one of the following equipment:
a. | the civil land vehicle of less than 4,500 kg (gross vehicle weight) intended for the transport of passengers for which it was intended; |
b. | the passenger and vehicle ferry with an overall length of at least 65 m for which it was intended; Or |
c. | an authorized and specially designed maintenance test facility; And |
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3. | incorporates an active mechanism that prevents the camera from operating when removed from the vehicle for which it was intended; |
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c. | the camera is limited by design to a maximum “radiant energy sensitivity” of 10 mA/W or less for wavelengths exceeding 760 nm, and has all of the following characteristics:
1. | has a response limit mechanism designed not to be deleted or modified; |
2. | incorporates an active mechanism that prevents the camera from operating when the response limit mechanism is removed; And |
3. | has not been specially designed or modified for underwater use; Or |
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d. | the camera has all of the following features:
1. | does not incorporate a 'live view' display or electronic images; |
2. | no possibility of producing a viewable image of the detected field of view; |
3. | the “focal plane array” only works when installed in the camera for which it was intended; And |
4. | The “focal plane array” incorporates an active mechanism that prevents it from functioning permanently when removed from the camera for which it was intended. |
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5. | imaging cameras incorporating solid-state detectors specified in 6A002.a.1. |
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6A004 - Optical equipment and components, as follows:
a. | optical mirrors (reflectors), as follows: Technical note: For the purposes of 6A004.a., the laser damage threshold is measured in accordance with ISO 21254-1:2011.
NB: |
For optical mirrors specially designed for lithography equipment, see paragraph 3B001. |
1. | 'Deformable mirrors' having an active optical aperture greater than 10 mm and having any of the following characteristics, and their specially designed components:
a. | having all of the following characteristics:
1. | a mechanical resonance frequency equal to or greater than 750 Hz; And |
2. | more than 200 actuators; Or |
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b. | one of the following laser damage thresholds:
1. | greater than 1 kW/cm 2 if a “continuous wave laser” is used; Or |
2. | greater than 2 J/cm 2 if “laser” pulses of 20 ns are used at a repetition frequency of 20 Hz; |
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2. | lightweight monolithic mirrors, with an average “equivalent surface mass” of less than 30 kg/m 2 and a total weight of more than 10 kg;
Note: |
Paragraph 6A004.a.2. does not control mirrors designed specifically to direct solar radiation in terrestrial installations using heliostats. |
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3. | lightweight “composite” or cellular mirror structures, with an average “equivalent surface mass” of less than 30 kg/m 2 and a total weight greater than 2 kg;
Note: |
Paragraph 6A004.a.3. does not control mirrors designed specifically to direct solar radiation in terrestrial installations using heliostats. |
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4. | mirrors specially designed for beam steering mirror mounts specified in 6A004.d.2.a. having a flatness of λ/10 or better (λ is equal to 633 nm) and having any of the following characteristics:
a. | diameter (or length of main axis) greater than or equal to 100 mm; Or |
b. | having all of the following characteristics:
1. | diameter (or length of main axis) greater than 50 mm but less than 100 mm; And |
2. | one of the following laser damage thresholds:
a. | greater than 10 kW/cm 2 if a “continuous wave laser” is used; Or |
b. | greater than 20 J/cm 2 if “laser” pulses of 20 ns are used at a repetition frequency of 20 Hz; |
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b. | optical components composed of zinc selenide (ZnSe) or zinc sulfide (ZnS) transmitting in the wavelength range greater than 3 000 nm but not greater than 25 000 nm, and having any of the following characteristics:
1. | volume greater than 100 cm 3 ; Or |
2. | diameter (or length of main axis) greater than 80 mm and thickness (depth) greater than 20 mm; |
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c. | “space-qualified” components for optical systems, as follows:
1. | components lightened to less than 20% “equivalent surface mass” compared to a solid blank of the same opening and thickness; |
2. | raw substrates, substrates having a surface coating (monolayer or multilayer, metallic or dielectric, conductive, semiconductor, or insulating), or comprising protective films; |
3. | segments or assemblies of mirrors designed to be assembled in space into an optical system having a collecting aperture equivalent to or greater than that of a single optic of 1 meter in diameter; |
4. | components made from “composite” materials having a coefficient of linear thermal expansion equal to or less than 5 × 10 – 6 in any coordinate direction; |
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d. | control equipment for optics, as follows:
1. | Equipment specially designed to preserve the face curvature or orientation of “space-qualified” components specified in 6A004.c.1. or 6A004.c.3.; |
2. | equipment for orientation, tracking, stabilization or alignment of the resonator, as follows:
a. | beam steering mirror mounts designed for mirrors having a diameter (or principal axis length) greater than 50 mm and having all of the following characteristics, together with specially designed electronic control equipment therefor:
1. | a maximum angular displacement equal to or greater than ± 26 mrad; |
2. | a mechanical resonance frequency equal to or greater than 500 Hz; And |
3. | an angular “accuracy” equal to or less (better) than 10 μrad (microradians); |
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b. | resonator alignment equipment having bandwidths equal to or greater than 100 Hz and “accuracy” equal to or less (better) than 10 μrad; |
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3. | gimbals having all of the following characteristics:
a. | a maximum travel greater than 5°; |
b. | a bandwidth equal to or greater than 100 Hz; |
c. | angular pointing errors equal to or less than 200 μrad (microradians); And |
d. | having one of the following characteristics:
1. | having a principal axis or diameter exceeding 0.15 m but not exceeding 1 m and capable of angular accelerations of more than 2 rad (radians)/s 2 ; Or |
2. | having a main axis or a diameter greater than 1 m and capable of angular accelerations of more than 0.5 rad (radians)/s 2 ; |
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e. | 'aspherical optical elements' having all of the following characteristics:
1. | largest dimension of optical aperture greater than 400 mm; |
2. | surface roughness less than 1 nm (root mean square value) for sample lengths equal to or greater than 1 mm; And |
3. | absolute magnitude of the coefficient of linear thermal expansion less than 3 × 10 – 6 /K at 25 °C. |
Technical notes:
1. | An 'aspherical optical element' is any element used in an optical system whose image surface(s) are designed to deviate from the shape of an ideal sphere. |
2. | Manufacturers are not required to measure the surface roughness specified in 6A004.e.2. unless the optical element was designed or produced to meet, or exceed, the control parameter. |
Note |
Paragraph 6A004.e. does not control 'aspherical optical elements' having any of the following characteristics:
a. | largest optical aperture dimension less than 1 m and a focal length/aperture ratio equal to or greater than 4.5:1; |
b. | largest optical aperture dimension equal to or greater than 1 m and a focal length/aperture ratio equal to or greater than 7:1; |
c. | designed as Fresnel, multi-lens, strip, prism or diffractive optical elements; |
d. | manufactured with borosilicate glass having a coefficient of linear thermal expansion greater than 2.5 × 10 – 6 /K at 25 °C; Or |
e. | X-ray optical element having internal mirror characteristics (e.g. tube mirrors). |
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NB |
For 'aspherical optical elements' specially designed for lithography equipment, see paragraph 3B001. |
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6A005 - “Lasers” other than those specified in 0B001.g.5. or 0B001.h.6., optical components and equipment, as follows:
Note 1: |
Pulsed “lasers” include those that operate in continuous waves with superimposed pulses. |
Note 2: |
Excimer, solid-state, chemical, carbon monoxide, carbon dioxide, and non-repeating pulsed neodymium glass “lasers” are controlled only in 6A005.d. Technical note: By “non-repetitive pulsed” lasers we mean “lasers” which produce a single output pulse or whose time interval between two pulses is greater than one minute. |
Note 3: |
Paragraph 6A005 includes fiber “lasers”. |
Note 4: |
The status of "lasers" using frequency conversion (i.e. changing wavelength) other than by pumping one "laser" by another "laser" is determined by the application control parameters both at the source “laser” output and at the optical output after frequency conversion. |
Note 5: |
6A005 does not control “lasers” as follows:
a. | Ruby “lasers” having an output energy of less than 20 J; |
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Technical note: For the purposes of 6A005, 'tap efficiency' is defined as the ratio of the output power of the 'laser' (or 'average output power') to the total electrical input power required to operate the 'laser'. ”, including power supply/conditioning and thermal conditioning/heat exchanger.
a. | Non-'tunable 'continued wave' (CW) lasers, having any of the following sets of characteristics:
1. | output wavelength less than 150nm and output power more than 1W; |
2. | output wavelength of 150 nm or more but not more than 510 nm and output power more than 30 W;
Note: |
Paragraph 6A005.a.2. does not control argon “lasers” having an output power equal to or less than 50 W. |
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3. | output wavelength greater than 510 nm but not greater than 540 nm and one of the following:
a. | transverse single-mode output and output power greater than 50W; Or |
b. | transverse multi-mode output and output power above 150W; |
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4. | output wavelength greater than 540 nm but not greater than 800 nm and output power greater than 30 W; |
5. | output wavelength greater than 800 nm but not greater than 975 nm and one of the following:
a. | transverse single-mode output and output power greater than 50W; Or |
b. | transverse multi-mode output and output power above 80W; |
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6. | output wavelength greater than 975 nm but not greater than 1150 nm and having any of the following:
a. | transverse single-mode output and output power above 200W; Or |
b. | transverse multimode output and one of the following characteristics:
1. | 'tap efficiency' greater than 18% and output power greater than 500 W; Or |
2. | output power above 2 kW; |
Note 1: |
Paragraph 6A005.a.6.b. does not cover industrial transverse multimode “lasers” having an output power greater than 2 kW and not greater than 6 kW and a total mass greater than 1,200 kg. For the purposes of this note, the total mass includes all components necessary for the operation of the "laser", e.g. the "laser", power supply, heat exchanger, but excludes external optics for beam conditioning and/or its delivery. |
Note 2: |
Paragraph 6A005.a.6.b. does not control industrial transverse multimode “lasers” having any of the following characteristics:
a. | an output power greater than 500 W but less than 1 kW, and having one of the following characteristics:
1. | produces beam parameters (BPP) greater than 0.7 mm mrad; And |
2. | 'brightness' greater than 1024 W/(mm · mrad) 2 ; |
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b. | an output power greater than 1 kW but less than 1.6 kW, and whose BPP is greater than 1.25 mm · mrad; |
c. | an output power greater than 1.6 kW but less than 2.5 kW, and whose BPP is greater than 1.7 mm · mrad; |
d. | an output power greater than 2.5 kW but less than 3.3 kW, and whose BPP is greater than 2.5 mm · mrad; |
e. | an output power greater than 3.3 kW but less than 4 kW, and whose BPP is greater than 3.5 mm · mrad; |
f. | an output power greater than 4 kW but less than 5 kW, and whose BPP is greater than 5 mm · mrad; |
g. | an output power greater than 5 kW but less than 6 kW, and whose BPP is greater than 7.2 mm · mrad; |
h. | an output power greater than 6 kW but less than 8 kW, and whose BPP is greater than 12 mm · mrad; Or |
i. | an output power greater than 8 kW but less than 10 kW, and whose BPP is greater than 24 mm · mrad. |
Technical note: For the purposes of 6A005.a.6.b., Note 2.a., 'brightness' means the output power of the 'laser' divided by the beam parameter product (BPP) squared, i.e. i.e., (output power)/BPP 2 . |
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7. | output wavelength greater than 1150 nm but not greater than 1555 nm and one of the following:
a. | transverse single-mode output and output power greater than 50W; Or |
b. | transverse single-mode output and output power above 80W; Or |
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8. | output wavelength above 1555nm and output power above 1W; |
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b. | Non-'tunable' 'pulsed lasers' having any of the following sets of characteristics:
1. | output wavelength less than 150 nm and one of the following:
a. | output energy greater than 50 mJ per pulse and “peak power” greater than 1 W; Or |
b. | “average output power” greater than 1W; |
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2. | output wavelength of 150 nm or more, but not more than 510 nm and one of the following:
a. | output energy greater than 1.5 J per pulse and “peak power” greater than 30 W; Or |
b. | “average output power” greater than 30W;
Note: |
Paragraph 6A005.b.2.b. does not control argon “lasers” having an “average output power” equal to or less than 50 W. |
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3. | output wavelength greater than 510 nm but not greater than 540 nm and one of the following sets of characteristics:
a. | transverse single-mode output and one of the following characteristics:
1. | output energy greater than 1.5 J per pulse and “peak power” greater than 50 W; Or |
2. | “average output power” greater than 50W; Or |
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b. | transverse multimode output and one of the following characteristics:
1. | output energy greater than 1.5 J per pulse and “peak power” greater than 150 W; Or |
2. | “average output power” greater than 150W; |
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4. | output wavelength greater than 540 nm but not greater than 800 nm and one of the following:
a. | “Pulse duration” less than 1 ps and having any of the following characteristics:
1. | output energy greater than 0,005 J per pulse and “peak power” greater than 5 GW; Or |
2. | “average output power” greater than 20W; Or |
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b. | “Pulse duration” equal to or greater than 1 ps and having any of the following characteristics:
1. | output energy greater than 1.5 J per pulse and “peak power” greater than 30 W; Or |
2. | “average output power” greater than 30W; |
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5. | output wavelength greater than 800 nm but not greater than 975 nm and having any of the following sets of characteristics:
a. | “Pulse duration” less than 1 ps and having any of the following characteristics:
1. | output energy greater than 0,005 J per pulse and “peak power” greater than 5 GW; Or |
2. | transverse single-mode output and “average output power” greater than 20W; |
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b. | “Pulse duration” equal to or greater than 1 ps but not exceeding 1 μs and having any of the following characteristics:
1. | output energy greater than 0.5 J per pulse and “peak power” greater than 50 W; |
2. | transverse single-mode output and “average output power” greater than 20W; Or |
3. | transverse multi-mode output and “average output power” above 50W; Or |
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c. | “Pulse duration” greater than 1 μs and having any of the following characteristics:
1. | output energy greater than 2 J per pulse and “peak power” greater than 50 W; |
2. | transverse single-mode output and “average output power” greater than 50W; Or |
3. | transverse multi-mode output and “average output power” above 80W; |
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6. | output wavelength greater than 975 nm but not greater than 1150 nm and having any of the following sets of characteristics:
a. | “Pulse duration” not exceeding 1 ps and having any of the following characteristics:
1. | Output “peak power” greater than 2 GW per pulse; |
2. | “average output power” greater than 30W; Or |
3. | output energy greater than 0.002 J per pulse; |
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b. | “Pulse duration” equal to or greater than 1 ps but less than 1 ns, and having any of the following characteristics:
1. | Output “peak power” greater than 5 GW per pulse; |
2. | “average output power” greater than 50W; Or |
3. | output energy greater than 0.1 J per pulse; |
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c. | “Pulse duration” equal to or greater than 1 ns but not exceeding 1 μs and having any of the following characteristics:
1. | transverse single-mode output and one of the following characteristics:
a. | “peak power” greater than 100 MW; |
b. | “average output power” greater than 20 W limited by design to a maximum pulse repetition frequency of less than or equal to 1 kHz; |
c. | 'tap efficiency' greater than 12% and 'average output power' greater than 100 W and capable of operating at a pulse repetition frequency greater than 1 kHz; |
d. | “average output power” greater than 150 W and capable of operating at a pulse repetition frequency greater than 1 kHz; Or |
e. | output energy greater than 2 J per pulse; Or |
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2. | transverse multimode output and one of the following characteristics:
a. | “peak power” greater than 400 MW; |
b. | 'tap efficiency' greater than 18% and 'average output power' greater than 500 W; |
c. | “average output power” greater than 2 kW; Or |
d. | output energy greater than 4 J per pulse; Or |
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d. | “pulse duration” exceeding 1 μs and any of the following:
1. | transverse single-mode output and one of the following characteristics:
a. | “peak power” greater than 500 kW; |
b. | 'tap efficiency' greater than 12% and 'average output power' greater than 100 W; Or |
c. | “average output power” greater than 150W; Or |
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2. | transverse multimode output and one of the following characteristics:
a. | “peak power” greater than 1 MW; |
b. | 'tap efficiency' greater than 18% and 'average output power' greater than 500 W; Or |
c. | “average output power” greater than 2 kW; |
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7. | output wavelength greater than 1150 nm but not greater than 1555 nm and one of the following sets of characteristics:
a. | “pulse duration” not exceeding 1 μs and one of the following:
1. | output energy greater than 0.5 J per pulse and “peak power” greater than 50 W; |
2. | transverse single-mode output and “average output power” greater than 20W; Or |
3. | transverse multi-mode output and “average output power” above 50W; Or |
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b. | “pulse duration” greater than 1 μs and one of the following:
1. | output energy greater than 2 J per pulse and “peak power” greater than 50 W; |
2. | transverse single-mode output and “average output power” greater than 50W; Or |
3. | transverse multi-mode output and “average output power” above 80W; Or |
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8. | output wavelength greater than 1555 nm and one of the following:
a. | output energy greater than 100 mJ per pulse and “peak power” greater than 1 W; Or |
b. | “average output power” greater than 1W; |
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c. | “Tunable” “lasers” having any of the following sets of characteristics:
1. | output wavelength less than 600 nm and one of the following:
a. | output energy greater than 50 mJ per pulse and “peak power” greater than 1 W; Or |
b. | average or continuous wave output power greater than 1 W; |
Note: |
Paragraph 6A005.c.1. does not control dye “lasers” and other liquid “lasers” characterized by a multi-mode output, a wavelength equal to or greater than 150 nm but not greater than 600 nm, and all of the following characteristics:
1. | output energy less than 1.5 J per pulse and “peak power” less than 20 W; And |
2. | average or continuous wave output power less than 20 W; |
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2. | output wavelength of 600 nm or more, but not more than 1400 nm and one of the following:
a. | output energy greater than 1 J per pulse and “peak power” greater than 20 W; Or |
b. | average or continuous wave output power greater than 20 W; Or |
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3. | output wavelength greater than 1400 nm and one of the following:
a. | output energy greater than 50 mJ per pulse and “peak power” greater than 1 W; Or |
b. | average or continuous wave output power greater than 1 W; |
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d. | other “lasers”, not specified in 6A005.a., 6A005.b. or 6A005.c., as follows:
1. | semiconductor 'lasers', as follows:
Note 1: |
Paragraph 6A005.d.1. includes solid-state “lasers” having optical emission connectors (e.g. fiber pigtails). |
Note 2: |
The status of solid-state “lasers” specifically designed for other equipment is determined by the status of that equipment. |
a. | Individual transverse single-mode semiconductor 'lasers', having any of the following characteristics:
1. | wavelength equal to or less than 1510 nm and average or CW output power greater than 1.5 W; Or |
2. | wavelength greater than 1510 nm and average or continuous wave output power greater than 500 mW; |
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b. | Individual transverse multi-mode semiconductor 'lasers', having any of the following characteristics:
1. | wavelength less than 1400 nm and average or CW output power greater than 15 W; |
2. | wavelength equal to or greater than 1400 nm and less than 1900 nm and average or continuous wave output power greater than 2.5 W; Or |
3. | wavelength equal to or greater than 1900 nm and average or continuous wave output power greater than 1 W; |
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c. | Individual semiconductor 'laser' 'bars', having any of the following characteristics:
1. | wavelength less than 1400 nm and average or CW output power greater than 100 W; |
2. | wavelength equal to or greater than 1400 nm and less than 1900 nm and average or continuous wave output power greater than 25 W; Or |
3. | wavelength equal to or greater than 1900 nm and average or continuous wave output power greater than 10 W; |
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d. | 'Array stacks' of semiconductor 'lasers' (two-dimensional arrays) having any of the following sets of characteristics:
1. | wavelength less than 1400 nm and one of the following:
a. | total average or CW output power less than 3 kW with an average or CW output 'power density' greater than 500 W/cm 2 ; |
b. | total average or CW output power equal to or greater than 3 kW, but less than or equal to 5 kW with an average or CW output 'power density' greater than 350 W/cm 2 ; |
c. | total average or continuous wave output power greater than 5 kW; |
d. | peak 'power density' emitted in pulses greater than 2,500 W/cm 2 ; Or
Note: |
Paragraph 6A005.d.1.d.1.d. does not cover monolithic devices manufactured by epitaxy. |
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e. | average spatial coherence or total CW output power greater than 150 W; |
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2. | wavelength greater than or equal to 1400 nm but less than 1900 nm and one of the following:
a. | total average or CW output power less than 250 W and average or CW output 'power density' greater than 150 W/cm 2 ; |
b. | total average or CW output power equal to or greater than 250 W, but less than or equal to 500 W with an average or CW output 'power density' greater than 50 W/cm 2 ; |
c. | total average or continuous wave output power greater than 500 W; |
d. | peak 'power density' emitted in pulses greater than 500 W/cm 2 ; Or
Note: |
Paragraph 6A005.d.1.d.2.d. does not cover monolithic devices manufactured by epitaxy. |
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e. | average spatial coherence or total CW output power greater than 15 W; |
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3. | wavelength greater than or equal to 1900 nm and one of the following:
a. | 'power density' of average or continuous wave output greater than 50 W/cm 2 ; |
b. | average or continuous wave output power greater than 10 W; Or |
c. | average spatial coherence or total CW output power greater than 1.5 W; Or |
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4. | at least one “laser” 'bar' referred to in paragraph 6A005.d.1.c.; |
Technical note: For the purposes of 6A005.d.1.d., 'power density' means the total "laser" output power divided by the surface area of the array stack transmitter. |
e. | 'Array stacks' of semiconductor 'lasers' other than those specified in 6A005.d.1.d. having all of the following characteristics:
1. | specially designed or modified to combine with other 'network stacks' to form a larger 'network stack'; And |
2. | Integrated connections, common for both electronics and cooling. |
Note 1: |
'Array stacks', formed by combining the array stacks of semiconductor "lasers" specified in 6A005.d.1.e., which are not intended to be combined or modified, are shown in 6A005.d.1.d. |
Note 2: |
'Array stacks', formed by combining 'array stacks' of semiconductor 'lasers' specified in 6A005.d.1.e., which are intended to be combined or modified, are shown in 6A005.d.1.e. |
Note 3: |
Paragraph 6A005.d.1.e. does not cover modular assemblies of single 'bars' intended to be manufactured into end-to-end linear array stacks. |
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Technical notes:
1. |
Solid-state “lasers” are commonly called “laser” diodes. |
2. |
A 'bar', also called a solid-state 'laser' 'bar', laser diode bar or diode 'bar', is made up of several solid-state 'lasers' in a one-dimensional array. |
3. |
A 'network stack' is made up of multiple 'bars' forming a two-dimensional array of semiconductor 'lasers'. |
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2. | Carbon monoxide (CO) 'lasers' having any of the following characteristics:
a. | output energy greater than 2 J per pulse and “peak power” greater than 5 kW; Or |
b. | average or continuous wave output power greater than 5 kW; |
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3. | Carbon dioxide (CO 2 ) 'lasers' having any of the following characteristics:
a. | CW output power greater than 15 kW; |
b. | energy emitted in pulses with a “pulse duration” greater than 10 μs and one of the following characteristics:
1. | “average output power” greater than 10 kW; Or |
2. | “peak power” greater than 100 kW; Or |
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c. | energy emitted in pulses having a “pulse duration” equal to or less than 10 μs and one of the following characteristics:
1. | pulse energy greater than 5 J per pulse; Or |
2. | “average output power” greater than 2.5 kW; |
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4. | Excimer 'lasers' having any of the following characteristics:
a. | output wavelength not exceeding 150 nm and one of the following:
1. | output energy greater than 50 mJ per pulse; Or |
2. | “average output power” greater than 1W; |
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b. | output wavelength greater than 150 nm but not greater than 190 nm and one of the following:
1. | output energy greater than 1.5 J per pulse; Or |
2. | “average output power” greater than 120W; |
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c. | output wavelength greater than 190 nm but not greater than 360 nm and one of the following:
1. | output energy greater than 10 J per pulse; Or |
2. | “average output power” greater than 500W; Or |
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d. | output wavelength greater than 360 nm and one of the following:
1. | output energy greater than 1.5 J per pulse; Or |
2. | “average output power” greater than 30W; |
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NB: |
For excimer "lasers" specially designed for lithographic equipment, see 3B001. |
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5. | “chemical lasers” as follows:
a. | hydrogen fluoride (HF) “lasers”; |
b. | deuterium fluoride (DF) “lasers”; |
c. | “transfer lasers” as follows:
1. | iodine dioxide (O 2 -I) “lasers”; |
2. | deuterium fluoride-carbon dioxide (DF-CO 2 ) “lasers”; |
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6. | 'Non-repetitive pulsed' neodymium glass 'lasers' having any of the following characteristics:
a. | “pulse duration” not exceeding 1 μs and output energy exceeding 50 J per pulse; Or |
b. | “Pulse duration” greater than 1 μs and output energy greater than 100 J per pulse; |
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